Published March 2017
| Version v1
Journal article
Proton straggling in thick silicon detectors
Creators
- 1. Space Vehicles Directorate, Air Force Research Laboratory, Kirtland AFB, NM 87117 (United States)
- 2. Laboratory for Atmospheric and Space Physics, University of Colorado, Boulder, CO 80303 (United States)
- 3. NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States)
Description
Straggling functions for protons in thick silicon radiation detectors are computed by Monte Carlo simulation. Mean energy loss is constrained by the silicon stopping power, providing higher straggling at low energy and probabilities for stopping within the detector volume. By matching the first four moments of simulated energy-loss distributions, straggling functions are approximated by a log-normal distribution that is accurate for Vavilov . They are verified by comparison to experimental proton data from a charged particle telescope.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2017.01.028Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2017.01.028;
- PII
- S0168583X17300368;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 394
- Journal Page Range
- p. 145-152
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51066027
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGED PARTICLES; COMPUTERIZED SIMULATION; ENERGY LOSSES; MONTE CARLO METHOD; PROTONS; RADIATION DETECTION; SI SEMICONDUCTOR DETECTORS; SILICON; STOPPING POWER; STRAGGLING
- Descriptors DEC
- BARYONS; CALCULATION METHODS; DETECTION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; LOSSES; MEASURING INSTRUMENTS; NUCLEONS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SIMULATION
Optional Information
- Notes
- Published by Elsevier B.V.