Published September 1988
| Version v1
Journal article
Low-background transistors for application in nuclear electronics
- 1. Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Serpukhov (USSR). Inst. Fiziki Vysokikh Ehnergij
- 2. Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (USSR)
Description
Investigations of silicon transistors were carried out to determine transistors with low value of base distributed resistance (R). Measurement results for R and current amplification coefficient β are presented for bipolar transistor several types. Correlations between R and β were studied. KT 399A, 2T640A and KT3117B transistors are found to be most adequate ones as a base for low-background amplifier development
Additional details
Additional titles
- Original title (Russian)
- Малошумящие транзисторы для применения в ядерной электронике
Publishing Information
- Journal Title
- Pribory i Tekhnika Ehksperimenta
- Journal Issue
- no.5
- Series
- Prib. Tekh. Ehksp.
- ISSN
- 0032-8162
- CODEN
- PRTEA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 21011234
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BACKGROUND NOISE; ELECTRIC CONDUCTIVITY; PERFORMANCE TESTING; PREAMPLIFIERS; SPECIFICATIONS; TRANSISTOR AMPLIFIERS; TRANSISTORS
- Descriptors DEC
- AMPLIFIERS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; NOISE; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TESTING