Published December 11, 2014 | Version v1
Journal article

Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation

  • 1. Istituto per la Microelettronica e Microsistemi, Zona Industriale, Ottava Strada, 5, 95121, Catania (Italy)
  • 2. Department of Materials Science and Engineering, Technion – Israel Institute of Technology, 32000, Haifa (Israel)
  • 3. STMicroelectronics, Stradale Primosole, 50, 95121, Catania (Italy)

Description

Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2014.08.028

Additional details

Identifiers

DOI
10.1016/j.nima.2014.08.028;
PII
S0168-9002(14)00957-7;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
767
Journal Page Range
p. 347-352
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.