Published June 26, 1980
| Version v1
Journal article
Study on the atomic structure of tin implanted into silicon
Creators
- 1. Moskovskij Inzhenerno-Fizicheskij Inst. (USSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Исследование структурного состояния атомов олова, имплантированных в кремний
Publishing Information
- Journal Title
- Pis'ma Zh. Tekh. Fiz.
- Journal Volume
- 6
- Journal Issue
- 12
- Series
- Pis'ma Zh. Tekh. Fiz.
- Journal Page Range
- 752-755
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 11563327
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ION IMPLANTATION; LASER RADIATION; MOESSBAUER EFFECT; MONOCRYSTALS; RADIATION DOSES; SILICON; SPECTRAL SHIFT; TIN 119
- Descriptors DEC
- CRYSTALS; DAYS LIVING RADIOISOTOPES; ELECTROMAGNETIC RADIATION; ELEMENTS; EVEN-ODD NUCLEI; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; NUCLEI; RADIATIONS; RADIOISOTOPES; SEMIMETALS; STABLE ISOTOPES; TIN ISOTOPES
Optional Information
- Notes
- Letter-to-the-editor; for English translation see the journal Soviet Technical Physics Letters (USA).