Published March 2000
| Version v1
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Radiation induced reactions in resist materials for electron beam and x-ray lithography
Creators
- 1. Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research
- 2. Argonne National Laboratory, Argonne, IL (United States)
Description
no abstract available
Files
31049689.pdf
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Additional details
Publishing Information
- Imprint Title
- Proceedings of the 8th Japan-China bilateral symposium on radiation chemistry
- Imprint Pagination
- 352 p.
- Journal Page Range
- p. 215-217
- Report number
- JAERI-Conf--2000-001
Conference
- Title
- 8. Japan-China bilateral symposium on radiation chemistry
- Acronym
- JCBSRC'99
- Dates
- 25-29 Oct 1999
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 31049689
- Subject category
- S38: RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR CHEMISTRY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ABSORPTION SPECTRA; ACETONITRILE; CHEMICAL REACTION KINETICS; ELECTRON BEAMS; INORGANIC ACIDS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SOLUTIONS; TRANSIENTS; YIELDS
- Descriptors DEC
- BEAMS; DISPERSIONS; HYDROGEN COMPOUNDS; INORGANIC COMPOUNDS; KINETICS; LEPTON BEAMS; MATERIALS; MIXTURES; NITRILES; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PARTICLE BEAMS; REACTION KINETICS; SPECTRA
Optional Information
- Notes
- 7 refs., 3 figs.