Properties of CdS films deposited by the electron beam evaporation technique

Thin CdS films were electron beam evaporated. The CdS powder synthesized in the laboratory by a chemical method was used as source for the deposition of films. Clean glass substrates were used. The substrate temperature was varied in the range of 30-250 oC. X-ray diffraction studies indicated polycrystalline hexagonal structure. The band gap was 2.39 eV. The grain size was 25-35 nm and the surface roughness was 0.3-1.5 nm with increase of substrate temperature. Photoconductive cells fabricated with the doped and undoped films have exhibited high photosensitivity and high signal to noise ratio. The current voltage characteristics were linear.