Performance analysis of one dimensional BC2N for nanoelectronics applications

Highlights: • Performance-analysing parameters like carrier concentration, intrinsic velocity and current-voltage characteristic of 1D BC₂N are modelled and investigated. • Carrier statistic and intrinsic velocity are discussed in both non-degenerate and degenerate regimes. • Comparable I-V characteristic trend is obtained when compared with the published experimental result with a subthreshold swing of 59.6mV/decade. • The results assure the capability of BC₂N as a potential candidate in nanoelectronic and optoelectronic applications. The BC₂N which is one of the graphene-boron nitride nanocomposites is found to have tunable electronic properties besides having an analogous hexagonal structure with the graphene and boron nitride. To assure the capability of the BC₂N nanowire (BC₂NNW) in the nanoelectronics and optoelectronics applications, the analytical modelling has been carried out using MATLAB followed by the performance analysis in which the nature of the carrier statistic and the intrinsic velocity are discussed. The results show that the carrier concentration of the BC₂NNW is 7.143 × 10⁷ m⁻¹. Besides that, the intrinsic velocity of BC₂NNW is dependent on the temperature in the non-degenerate regime while only dependent on the carrier concentration when entering the degenerate regime. Moreover, a comparable trend of the current-voltage (I-V) characteristics graph is obtained when compared with the published experimental result with an extracted subthreshold swing of 59.6mV/decade. These further assure the BC₂N as one of the potential candidates in nanoelectronics and optoelectronics applications in the future.