Conductance and resonant tunneling in multi-channel double barrier structures under transverse and longitudinal electric fields

Transport properties of electrons through biased double barrier semiconductor structures with finite transverse width w_y, in the presence of a channel-mixing transverse electric field E_T (along the y-axis), were studied. We solve the multichannel Schrödinger equation using the transfer matrix method and transport properties, like the conductance G and the transmission coefficients T_ij have been evaluated as functions of the electrons' energy E and the transverse and longitudinal (bias) electric forces, f_T and f_b. We show that peak-suppression effects appear, due to the applied bias. Similarly, coherent interference of wave-guide states induced by the transverse field is obtained. We show also that the coherent interference of resonant wave-guide states gives rise to resonant conductance, which can be tuned to produce broad resonant peaks, implying operation frequencies of the order of 10 THz or larger