Published March 30, 2015 | Version v1
Journal article

Electronic structure and magnetism in g-C4N3 controlled by strain engineering

  • 1. Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
  • 2. Department of Physics, NingBo University, NingBo 315001 (China)
  • 3. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

Description

Regulation of magnetism and half-metallicity has attracted much attention because of its potential in spintronics. The magnetic properties and electronic structure of graphitic carbon nitride (g-C4N3) with external strain are determined theoretically based on the density function theory and many-body perturbation theory (G0W0). Asymmetric deformation induced by uniaxial strain not only regulates the magnetic characteristics but also leads to a transformation from half-metallicity to metallicity. However, this transition cannot occur in the structure with symmetric deformation induced by biaxial strain. Our results suggest the use of strain engineering in metal-free spintronics applications

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
13
Journal Page Range
p. 132406-132406.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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