Published October 1988 | Version v1
Journal article Metadata-only

Formation of metastabl centers in irradiated silicon

Creators

  • 1. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)

Description

Results of investigations of n-type silicon monocrystals, irradiated by gamma-quanta with 15-30 MeV energy are presented. Specific electric resistance was measured after annealing at 300-600 deg C. The annealing stage, conditioned by formation of metastable centers was observed in the silicon alloyed by boron and irradiated by reactor neutrons and wasn't observed in the silicon alloyed by phosphorus. It enabled to assume that formation of metastable centers represented the result of interaction of mobile defects occurring during radiation acceptor annealing with atoms of acceptor additions

Additional details

Additional titles

Original title (Russian)
Образование метастабильных центров в облученном кремнии

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
22
Journal Issue
10
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
1876-1878
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20027621
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; BORON ADDITIONS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; HIGH TEMPERATURE; MEV RANGE 10-100; MONOCRYSTALS; N-TYPE CONDUCTORS; PHOSPHORUS ADDITIONS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
CRYSTALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONIZING RADIATIONS; MATERIALS; MEV RANGE; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS