Published July 1996
| Version v1
Journal article
Physical bases for ion implantation and transformation of surface properties
Creators
- 1. Gosudarstvennyj Tekhnicheskij Univ., Sankt-Peterburg (Russian Federation)
Description
Features of defect accumulation under surface irradiation by light ions, molecular effect, long-range action effect, ion-stimulated crystallization and production of steady states in case of ion bombardment under increased temperatures, as well as results of certain applied investigations are considered in the review. The main attention is paid to semiconductors. 56 refs., 12 figs
Additional details
Additional titles
- Original title (Russian)
- Физические основы ионного внедрения и изменения свойств поверхности
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 60
- Journal Issue
- 7
- Journal Page Range
- p. 62-81.
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- 12. International conference on interaction of ions with surfaces.
- Original Conference Title
- 12. Mezhdunarodnaya konferentsiya po vzaimodejstviyu ionov s poverkhnost'yu
- Dates
- Sep 1995.
- Place
- Zvenigorod (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28044580
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATOMIC DISPLACEMENTS; CRYSTAL DEFECTS; CRYSTALLIZATION; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; REVIEWS; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES
- Descriptors DEC
- CRYSTAL STRUCTURE; DOCUMENT TYPES; HEAT TREATMENTS; MATERIALS; PHASE TRANSFORMATIONS; RADIATION EFFECTS