Energy gap modulation of graphene nanoribbons by F termination
Creators
- 1. College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061 (China)
- 2. College of Physics and Information Engineering, Henan Normal University, Xinxiang, Henan 453007 (China)
Description
Under the generalized gradient approximation (GGA), the electronic properties are studied for the F-terminated graphene nanoribbons (GNRs) with either zigzag edge (ZGNRs) or armchair edge (AGNRs) by using the first-principles projector augmented wave potential within the density function theory (DFT) framework. The results show that an edge state appears at the Fermi level EF in the broader F-terminated ZGNRs, but does not appear in all the F-terminated AGNRs due to their dimerized C-C bonds at edge. The density of states (DOS) and projected DOS (PDOS) analyses show that the F-terminated ZGNRs are metallic and have a sharp peak at the Fermi level when the width is large enough. In contrast, the AGNRs are always semiconductors independent of their width. The charge density contours analyses shows that the C-F bond is an ionic bond due to a much stronger electronegativity of the F atom than that of the C atom. However, all kinds of the C-C bonds display a typical nonpolar covalent bonding feature.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2011.02.025Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2011.02.025;
- PII
- S0169-4332(11)00216-9;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 257
- Journal Issue
- 15
- Journal Page Range
- p. 6440-6444
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44024605
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- APPROXIMATIONS; BONDING; CARBON; CHARGE DENSITY; COVALENCE; DENSITY; ELECTRONEGATIVITY; ENERGY GAP; FERMI LEVEL; HONEYCOMB STRUCTURES; LAYERS; NANOSTRUCTURES; PALLADIUM OXIDES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; ELEMENTS; ENERGY LEVELS; FABRICATION; JOINING; MATERIALS; MECHANICAL STRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PALLADIUM COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.