CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al2O3) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al2O3 nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.