Published 1976
| Version v1
Journal article
Energy dependence of degradation rate of silicon conductivity under proton irradiation
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Энергетическая зависимост' скорости деградации проводимости кремния при облучении протонами
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 10
- Journal Issue
- 12
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2387-2389
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 9387479
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CARRIER LIFETIME; COMPARATIVE EVALUATIONS; ENERGY DEPENDENCE; MEV RANGE 01-10; MEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; PROTON BEAMS; SILICON
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; LIFETIME; MEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.