Published October 1, 1992
| Version v1
Journal article
Single-electron tunnelling observed at room temperature by scanning-tunnelling microscopy
- 1. Philips Research Labs., Eindhoven (Netherlands)
Description
Ultrasmall (< or approx.5 nm in lateral diameter) double-barrier tunnel junctions have been realized using a scanning tunnelling microscope, and an optimized metal particle-oxide-metallic substrate system. Three electrical transport effects, all in good agreement with the semi-classical theory of single-electron tunnelling, have been found at room temperature: the Coulomb gap, the Coulomb staircase and zero-bias conductance oscillations as a function of tip-particle distance. (orig.)
Additional details
Publishing Information
- Journal Title
- Europhysics Letters
- Journal Volume
- 20
- Journal Issue
- 3
- Journal Page Range
- p. 249-254.
- ISSN
- 0295-5075
- CODEN
- EULEEJ
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 24035060
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COULOMB FIELD; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; GOLD; OSCILLATIONS; SCANNING ELECTRON MICROSCOPY; SEMICLASSICAL APPROXIMATION; TEMPERATURE DEPENDENCE; TUNNEL EFFECT; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELEMENTS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; ZIRCONIUM COMPOUNDS