Published December 1981 | Version v1
Journal article

Yield of electrons with fixed energy losses from Si (111) bombarded with E/sub p/ = 20--300 eV electrons

  • 1. M. I. Kalinin Polytechnic Institute, Leningrad

Description

The dependences of the yield of inelastically scattered electrons which suffered different but fixed energy losses, on the primary electron energy were obtained and compared with the energy dependences of the elastic reflection coefficient and its derivative. The two types of dependence were basically similar except that the yield curves showed more clearly certain singularities particularly at primary energies below 50 eV. The yield curves exhibited a hyperfine a hyperfine structure which was independent of the energy losses

Additional details

Publishing Information

Journal Title
Sov. Phys. - Solid State (Engl. Transl.)
Journal Volume
23
Journal Issue
12
Series
Sov. Phys. - Solid State (Engl. Transl.).
Journal Page Range
2145-2146
ISSN
0584-5807

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14747636
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
ELASTIC SCATTERING; ELECTRON COLLISIONS; ELECTRON EMISSION; ENERGY LOSSES; EV RANGE 10-100; EV RANGE 100-1000; INELASTIC SCATTERING; SECONDARY EMISSION; SILICON
Descriptors DEC
COLLISIONS; ELEMENTS; EMISSION; ENERGY RANGE; EV RANGE; SCATTERING; SEMIMETALS

Optional Information

Notes
Cover-to-cover translation of Fizika Tverdogo Tela (USSR).