Published December 1981
| Version v1
Journal article
Yield of electrons with fixed energy losses from Si (111) bombarded with E/sub p/ = 20--300 eV electrons
Description
The dependences of the yield of inelastically scattered electrons which suffered different but fixed energy losses, on the primary electron energy were obtained and compared with the energy dependences of the elastic reflection coefficient and its derivative. The two types of dependence were basically similar except that the yield curves showed more clearly certain singularities particularly at primary energies below 50 eV. The yield curves exhibited a hyperfine a hyperfine structure which was independent of the energy losses
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Solid State (Engl. Transl.)
- Journal Volume
- 23
- Journal Issue
- 12
- Series
- Sov. Phys. - Solid State (Engl. Transl.).
- Journal Page Range
- 2145-2146
- ISSN
- 0584-5807
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14747636
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ELASTIC SCATTERING; ELECTRON COLLISIONS; ELECTRON EMISSION; ENERGY LOSSES; EV RANGE 10-100; EV RANGE 100-1000; INELASTIC SCATTERING; SECONDARY EMISSION; SILICON
- Descriptors DEC
- COLLISIONS; ELEMENTS; EMISSION; ENERGY RANGE; EV RANGE; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika Tverdogo Tela (USSR).