Growing of the (Sn2)1-x(InSb)x epitaxial layers on the GaAs substrate from a liquid phase

Full text: The interest to narrow-band gap semiconductors is connected with using them in IR-technique. Due to the small value of band gap width, solid solutions on a base of (Sn2)1-x(InSb)x can change an expensive narrow-band gap material for infrared radiation. By the liquid phase epitaxy method on substrates we obtained solid solution in following conditions [1]: the growth temperature interval is 325 - 260 C; speed of the melting cooling is 0,5 - 1,0 S/min. We obtained crystalline perfect, smoothly shining films. We used the polished plates of gallium arsenide with diameter of 25 mm oriented in a direction (100), n-type conductivity with concentration of carriers n=(4 - 7)·1016-20;1017 sm-3 as substrates. Researches on the Jeol microanalysater showed that the obtaining on the surface of the epilayer films have been presented as a solid solution. By X-ray diffraction method the parameters of solid solution lattice were defined [2]. According to direct and riverse of current-voltage characteristics and results of other researches we can suppose that electrical conduction in obtained structures is defined by tunnel or recombination mechanisms. Measurements showed that obtained structures have sensitiveness in interval 5-1 microns. The width of band gap of solid solution is equal to∼ 0, 11-0, 12 eV. In such way for the first time the impossibility of existing some narrow-bandgap semiconductors solid solution is shown. By the liquid phase epitaxy method from the indium solution melting has been grown solid solution and also heterostructures have been obtained. (authors)