Published August 1974 | Version v1
Journal article Metadata-only

Charge storage in injection lasers and its effect on high-speed pulse modulation of laser diode

Creators

  • 1. Bell Labs., Holmdel, NJ

Description

Charge storage injection lasers under transient forward bias has been found to be responsible for the difference in the observed threshold for a driving current pulse with and without another pulse preceding it. Estimated relative threshold currents of two successive pulses as a function of pulse spacing based on the charge storage model agreed reasonably well with the experiment.

Additional details

Identifiers

DOI
10.1109/proc.1974.9584;

Publishing Information

Journal Title
Proceedings of the IEEE
Journal Volume
62
Journal Issue
8
Series
Proc. IEEE (Inst. Elec. Electron. Eng.).
Journal Page Range
1176-1177
ISSN
0018-9219

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
6190839
Subject category
S42: ENGINEERING;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
MODULATION; PULSES; SEMICONDUCTOR LASERS
Descriptors DEC
AMPLIFIERS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Optional Information

Notes
Published in summary form only.; Updated automatically by Metadata and Full-Text Enrichment Agent