Published November 1, 1986
| Version v1
Journal article
Correlation between deep-level parameters and energy resolution of p-type high purity Ge γ-detectors
Creators
- 1. Ghent Rijksuniversiteit (Belgium). Lab. voor Kristallografie en Studie van de Vaste Stof
- 2. Metallurgie Hoboken, Overpelt (Belgium)
Description
A physical basis is presented for the previously reported correlation between deep levels in p-type high purity germanium and the energy resolution of corresponding γ-detectors. Taking account of re-emission of trapped holes at 77 K it is shown that effective hole traps are deeper than about Ev+0.07 eV. Slowly re-emitting traps may become saturated during detector operation. The detector resolution criterion L ≤ 2 keV is found to correspond with an upper limit of 4.5 x 109 cm-3 for the total active copper density. This density criterion is shown to be a reliable basis for the routine DLTS characterisation of high purity germanium production. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. A
- Journal Volume
- 251
- Journal Issue
- 3
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 519-526
- ISSN
- 0168-9002
- CODEN
- NIMAE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 18010275
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGE COLLECTION; COPPER IONS; EFFICIENCY; ELECTRONIC STRUCTURE; ENERGY LEVELS; ENERGY RESOLUTION; GAMMA DETECTION; GERMANIUM; HIGH-PURITY GE DETECTORS; HOLES; IMPURITIES; LOW TEMPERATURE; P-TYPE CONDUCTORS; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TRAPS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DETECTION; DISTRIBUTION; ELEMENTS; GE SEMICONDUCTOR DETECTORS; IONS; MATERIALS; MEASURING INSTRUMENTS; METALS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS