Published March 1989
| Version v1
Journal article
Fabrication of S-N-S Josephson junctions of Y-Ba-Cu-O/Au/Nb thin film sandwiches
Creators
- 1. Electrotechnical Lab., 1-1-4 Umezono, Tsukuba, Ibaraki (Japan)
Description
The authors have fabricated S-N-S Josephson junctions which consist of Y-Ba-Cu-O/Au/Nb thin film sandwiches with various thicknesses of Au barrier. Due to the ac-Josephson effect, the Shapiro steps are observed iin the S-N-S junctions under microwave radiation. The magnetic field dependence of the critical current shows that the junctions behave as the self-field limited Josephson junctions. In addition, from the temperature dependence of the critical current near the transition temperature of the junctions, it is found that the thickness of Au barrier is shorter than the coherence length of Au
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Magnetics
- Journal Volume
- 25
- Journal Issue
- 2
- Series
- IEEE Trans. Magn.
- Journal Page Range
- 795-798
- ISSN
- 0018-9464
- CODEN
- IEMGA
Conference
- Title
- Applied superconductivity conference.
- Dates
- 21-25 Aug 1988.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20073851
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM OXIDES; COPPER OXIDES; CRITICAL CURRENT; FABRICATION; GOLD; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; MICROWAVE RADIATION; NIOBIUM; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; TRANSITION TEMPERATURE; YTTRIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; CURRENTS; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; YTTRIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-880812--.