Published December 1984 | Version v1
Journal article Metadata-only

Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon

Creators

  • 1. Rio Grande do Sul Univ., Porto Alegre (Brazil). Inst. de Fisica
  • 2. Hahn-Meitner-Institut fuer Kernforschung Berlin G.m.b.H. (Germany, F.R.)
  • 3. Pontificia Univ. Catolica do Rio de Janeiro (Brazil). Dept. de Fisica

Description

Depth distribution profiles of 15 to 350 keV 69Ga+ implanted at room temperature in amorphized silicon have been measured by 4He ion Rutherford backscattering. The measured projected ranges and range stragglings are in excellent agreement with the predictions calculated via realistic Monte Carlo simulations, TRIM code. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff. Lett.
Journal Volume
85
Journal Issue
3
Series
Radiat. Eff. Lett.
Journal Page Range
117-122
ISSN
0142-2448

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
16032259
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMORPHOUS STATE; COMPUTERIZED SIMULATION; DEPTH; GALLIUM IONS; GALLIUM 69; HELIUM 4 BEAMS; ION IMPLANTATION; KEV RANGE; MEDIUM TEMPERATURE; MONTE CARLO METHOD; RANGE; RUTHERFORD SCATTERING; SILICON; SPATIAL DISTRIBUTION; T CODES
Descriptors DEC
ATOMIC IONS; BEAMS; CHARGED PARTICLES; COMPUTER CODES; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; GALLIUM ISOTOPES; INTERMEDIATE MASS NUCLEI; ION BEAMS; IONS; ISOTOPES; NUCLEI; ODD-EVEN NUCLEI; SCATTERING; SEMIMETALS; SIMULATION; STABLE ISOTOPES