Published April 2009 | Version v1
Journal article

Syntheses, crystal structures, and characterization of As(III) and As(V) thioarsenates, [Mn2(phen)(AsIII2S5)]n and [Mn3(phen)3(AsvS4)2]n.nH2O

  • 1. Graduate University of Chinese Academy of Sciences, Beijing 100039 (China)
  • 2. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

Description

The hydrothermal reactions of As, Mn, S, phen (phen=1,10-phenanthroline), and en (en=ethylenediamine) yield two manganese As(III) and As(V) thioarsenates, [Mn2(phen)(AsIII2S5)]n (1) and [Mn3(phen)3(AsVS4)2]n.nH2O (2), respectively. Single-crystal X-ray diffraction analyses reveal that compound 1 is a two-dimensional (2D) layer of (6,3) topology. The 18-membered rings within the 2D porous layers are formed by corner-, edge-, and face-sharing cubane-like [Mn2As2S4] units along the [100] direction. Whereas compound 2 is a one-dimensional (1D) chain structure. They are both characterized by IR, elemental analysis, EDS, and X-ray powder diffraction. The thermogravimetric analysis of 1 and 2 are discussed. Both the compounds are semiconductors with the band gap of Eg (compound 1)=2.01 eV (617 nm) and Eg (compound 2)=1.97 eV (629 nm), respectively. In addition, the variable-temperature magnetic susceptibility data suggest weak antiferromagnetic interactions between the Mn2+ ions in these two compounds. - Graphical abstract: Two manganese As(III) and As(V) thioarsenates, namely, [Mn2(phen)(AsIII2S5)]n (1) (top structure) and [Mn3(phen)3(AsVS4)2]n.nH2O (2) (bottom structure), have been isolated under hydrothermal conditions. Compound 1 is a 2D layer of (6,3) topology, while that of 2 is a 1D chain structure. The oxidation-state of arsenic might be related to the molar ratio of the reactants. They are both characterized by IR, elemental analysis, X-ray powder diffraction, and EDS. The thermogravimetric analysis and magnetism of 1 and 2 are discussed. Both the compounds are semiconductors.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jssc.2009.01.021

Additional details

Identifiers

DOI
10.1016/j.jssc.2009.01.021;
PII
S0022-4596(09)00022-X;

Publishing Information

Journal Title
Journal of Solid State Chemistry
Journal Volume
182
Journal Issue
4
Journal Page Range
p. 913-919
ISSN
0022-4596
CODEN
JSSCBI

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.