Published January 30, 2008 | Version v1
Journal article

Assembly of CdS quantum dots onto mesoscopic TiO2 films for quantum dot-sensitized solar cell applications

  • 1. Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

Description

Colloidal cadmium sulfide (CdS) quantum dots (QDs) were prepared and surface modified by mercaptosuccinic acid (MSA) to render a surface with carboxylic acid groups (MSA-CdS). The MSA-CdS QDs were then assembled onto bare TiO2 mesoporous films using the carboxylic groups/TiO2 interaction. The TiO2 film was also surface modified by 3-mercaptopropyl trimethoxysilane (MPTMS) or 3-aminopropyl-methyl diethoxysilane (APMDS) to prepare, respectively, a thiol (-SH) or amino (-NH2) terminated surface for binding with the CdS QDs. The experimental results showed that the MPTMS-modified film has the highest adsorption rate and adsorption amount to the CdS QDs, attributable to the strong thiol/CdS interaction. In contrast, the adsorption rate and incorporated amount of the QDs on the bare TiO2 film are much lower than for the silane-modified films. The incident photon-to-current conversion efficiency (IPCE) obtained for the CdS-sensitized TiO2 electrode was about 20% (at 400 nm) for the bare TiO2, 13% for the MPTMS-TiO2, and 6% for APMDS-TiO2. The current-voltage measurement under dark conditions reveals a higher dark current on the MPTMS- and APMDS-modified electrodes, indicating a lower coverage ratio of CdS on these TiO2 films. This result is attributed to the fast adsorption rate of CdS QDs on the bottleneck of a mesopore which inhibits the transport of the QDs deep into the inner region of a pore. For the bare TiO2 film, the lower incorporated amount of CdS but higher energy conversion efficiency indicates the formation of a better-covered CdS QDs monolayer. The moderate adsorption rate of MSA-CdS QDs using the carboxylic acid/TiO2 interaction is responsible for the efficient assembly of QDs onto the mesoporous TiO2 films

Additional details

Identifiers

DOI
10.1088/0957-4484/19/04/045602;
PII
S0957-4484(08)57186-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
4
Journal Page Range
p. 045602
ISSN
0957-4484