The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implantation in gallium arsenide

A computer simulation of the effects of air/semiconductor depletion on Hall effect profiling has been used, in conjunction with experimental data, to determine the compensating effects of oxygen implantation on activated silicon implants in GaAs. The results show that after annealing at 8000C/15 minutes the compensation can be separated into two distinct regions. Surface compensation is attributed to electronic damage and tail compensation is thought to be due to either the presence of oxygen or nuclear disorder introduced by the oxygen implant. (author)