Published July 18, 2016 | Version v1
Journal article

Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

  • 1. Tyndall National Institute, University College Cork, Cork T12 R5CP (Ireland)
  • 2. Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork T12 P928 (Ireland)
  • 3. III-V Lab, Alcatel Lucent Bell Labs, Palaiseau F-91767 (France)
  • 4. Waterford Institute of Technology, Waterford X91 K0EK (Ireland)
  • 5. National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg 197101 (Russian Federation)

Description

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the "dynamical" linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
109
Journal Issue
3
Journal Page Range
vp.
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2016 Author(s)