Published March 15, 1994
| Version v1
Journal article
Unoccupied surface electronic structure of Gd(0001)
- 1. Materials Science Divison, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- 2. Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)
- 3. Department of Physics, University of Nebraska, Lincoln, Nebraska 68588 (United States)
- 4. Departamento de Fisica de la Materia Condensada, C-III, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)
- 5. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Description
The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near EF is observed at bar Γ. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be Γ3+ at 1.9 eV and A1 at 0.8 eV
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 49
- Journal Issue
- 11
- Journal Page Range
- p. 7734-7738.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25048895
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; FERMI LEVEL; GADOLINIUM; HYDROGEN; PHOTOEMISSION; THIN FILMS
- Descriptors DEC
- ELEMENTS; EMISSION; ENERGY LEVELS; FILMS; METALS; NONMETALS; RARE EARTHS; SECONDARY EMISSION; SORPTION