Published 1990 | Version v1
Book Metadata-only

Thermodynamic and structural properties of MeV ion beam amorphized silicon

Creators

  • 1. FOM Inst. for Atomic and Molecular Physics, Kruislaan 407, 1089 SJ Amsterdam (Netherlands)
  • 2. AT and T Bell Labs., Murray Hill, NJ (USA)
  • 3. AT and T Bell Labs., Holmdel, NJ (USA)
  • 4. Harvard Univ., Cambridge, MA (USA)

Description

Thermodynamic and structural properties of amorphous Si (a-Si), prepared by MeV 28Si+-ion implantation are investigated by differential scanning calorimetry, Raman spectroscopy and x-ray diffraction. The influence of thermal annealing below 500 degrees C on a-Si is investigated with these different probes. The observed changes result from structural relaxation. Raman spectroscopy and x-ray diffraction show that structural relaxation is accompanied by changes in the average atomic structure

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-045-3
Imprint Title
Beam-solid interactions, physical phenomena
Imprint Pagination
872 p.
Journal Page Range
p. 683-688.

Conference

Title
physical phenomena.
Acronym
Conference on beam-solid interactions
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22015713
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; INTERACTIONS; ION BEAMS; ION IMPLANTATION; MEV RANGE; MICROSTRUCTURE; RAMAN SPECTRA; SILICON; THERMODYNAMIC PROPERTIES; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
BEAMS; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; ENERGY RANGE; FILMS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SPECTRA

Optional Information

Secondary number(s)
CONF-8911139--.