Published March 9, 2018 | Version v1
Journal article

Sensitive SERS detection at the single-particle level based on nanometer-separated mushroom-shaped plasmonic dimers

  • 1. School of Physics and Electronics, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082 (China)
  • 2. College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 (China)
  • 3. College of Mechanical and Vehicle Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082 (China)

Description

Elevated metallic nanostructures with nanogaps (<10 nm) possess advantages for surface enhanced Raman scattering (SERS) via the synergic effects of nanogaps and efficient decoupling from the substrate through an elevated three-dimensional (3D) design. In this work, we demonstrate a pattern-transfer-free process to reliably define elevated nanometer-separated mushroom-shaped dimers directly from 3D resist patterns based on the gap-narrowing effect during the metallic film deposition. By controlling the initial size of nanogaps in resist structures and the following deposited film thickness, metallic nanogaps could be tuned at the sub-10 nm scale with single-digit nanometer precision. Both experimental and simulated results revealed that gold dimer on mushroom-shaped pillars have the capability to achieve higher SERS enhancement factor comparing to those plasmonic dimers on cylindrical pillars or on a common SiO2/Si substrate, implying that the nanometer-gapped elevated dimer is an ideal platform to achieve the highest possible field enhancement for various plasmonic applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/aaa691

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
29
Journal Issue
10
Journal Page Range
[7 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52002637
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
NANOSTRUCTURES; RAMAN EFFECT; SILICA; SIMULATION
Descriptors DEC
MINERALS; OXIDE MINERALS