Role of vanadium content in ZnO thin films grown by pulsed laser deposition
- 1. Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko Shosse 72, 1784 Sofia (Bulgaria)
- 2. Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
Description
Vanadium-doped ZnO films (Zn1-xVxO, where x = 0.02, 0.03, 0.05 and 0.07), were formed from ceramic targets on c-cut sapphire substrates using pulsed laser deposition at substrate temperature of 600 deg. C and oxygen pressure of 10 Pa. In order to clarify how the vanadium concentration influences the films' properties, structural and magnetic investigations were performed. All films crystallised in wurtzite phase and presented a c-axis preferred orientation at low concentrations of vanadium. The results implied that the doping concentration and crystalline microstructure influence strongly the system's magnetic characteristics. Weak ferromagnetism was registered for the film with the lowest doping concentration (2 at.%), which exhibited a ferromagnetic behavior at Curie temperature higher than 300 K. Increasing the vanadium content in the film caused degradation of the magnetic ordering
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2007.07.180Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2007.07.180;
- PII
- S0169-4332(07)01091-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 254
- Journal Issue
- 4
- Journal Page Range
- p. 1228-1231
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- Laser synthesis and processing of advanced materials
- Acronym
- E-MRS symposium P
- Dates
- 28 May - 1 Jun 2007
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39097217
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CERAMICS; CURIE POINT; DOPED MATERIALS; ENERGY BEAM DEPOSITION; FERROMAGNETISM; LASER RADIATION; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; OXYGEN; PULSED IRRADIATION; SAPPHIRE; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; VANADIUM ADDITIONS; ZINC OXIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CORUNDUM; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; IRRADIATION; MAGNETISM; MATERIALS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS; SURFACE COATING; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION TEMPERATURE; VANADIUM ALLOYS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.