Simulation of diffusion controlled etching

A new approach to simulate diffusion controlled etching is presented. In this approach the concentration profile of the etching solution at the mask free areas of the substrate surface is at first calculated. Afterwards, a virtual diffusion process with the calculated concentration as the diffusion source is performed. The simulation result (etching profile) is then presented through an iso-concentration line, whose value is determined by fitting to an experimental result. Comparisons between two dimensional simulated results and results presented in the literature show good agreement. (author)