Module for dielectric surfaces modification by fast neutral particles beams

In this paper, we describe the module for dielectric and wide-gap semiconductor surfaces modification by fast neutral beam. The module can be used for cleaning, etching or assisting of films deposition. The surface proceeding by neutral beam can prevent an accumulation of surface charge without using current compensation by inserting electrons to the beam or RF power supply. The module beside cathode and anode contains an electrode with floating potential. Insertion of the additional electrode causes electron retention in an electrostatic trap resulting the reducing of the module operating pressure. Moreover, the electrode with floating potential allows increasing the current efficient of the module. An important feature of the module is that neutralization of the ions extracted from the plasma occurs in the cathode potential well. Thereby ions that have not neutralized cannot leave nearcathode region and there are no fast ions in the output beam. Module does not contain sources of the magnetic fields or elements heated by external sources. Module operates with free cooling. Thus, the module does not need water cooling and can be freely moved in the vacuum chamber