Published May 2017 | Version v1
Journal article

Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions

  • 1. Saint Petersburg Electrotechnical University "LETI" (Russian Federation)
  • 2. Saint Petersburg State Technological Institute (Russian Federation)

Description

A technique for synthesizing gas-sensing copper-oxide layers by layer-by-layer deposition onto glass and plastic substrates is considered. Deposition is based on the oxidation of a copper–ammonia complex by hydrogen peroxide. Layers synthesized at various numbers of deposition cycles are studied by atomicforce microscopy and transmission spectroscopy methods (300–1000 nm). The spectral shape indicates the mixed nature of the oxide with predominant copper oxide (I) Cu2O with a corresponding band gap of 2.1 eV. The layers have a continuous granular structure. The surface concentration of Brönsted acid adsorption sites with pKa ≈ 2.5 (OH acid groups), determined by the indicator method, is 560 μmol/m2 for the initial films, and threefold increases after heat treatment at 80°C for 30 min. The results obtained are interesting for the use of the described technology for fabricating copper-oxide active layers in gas-sensing sensors operating at room temperature.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
51
Journal Issue
5
Journal Page Range
p. 586-590
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49107582
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ADSORPTION; COPPER OXIDES; DEPOSITION; DEPOSITS; HEAT TREATMENTS; HYDROGEN PEROXIDE; OXIDATION; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; COPPER COMPOUNDS; HYDROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PEROXIDES; SORPTION; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2017 Pleiades Publishing, Ltd.