Published December 1991 | Version v1
Journal article Metadata-only

Effect of temperature on parameters in total dose effect prediction of metal oxide semiconductor devices

Creators

  • 1. Hitachi Ltd., Ibaraki (Japan). Energy Research Lab.

Description

Published in summary form only

Additional details

Publishing Information

Journal Title
Journal of Nuclear Science and Technology (Tokyo)
Journal Volume
28
Journal Issue
12
Series
J. Nucl. Sci. Technol. (Tokyo).
Journal Page Range
1149-1152
ISSN
0022-3131
CODEN
JNSTA

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
23083832
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ARRHENIUS EQUATION; DOSE LIMITS; DOSE RATES; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; LEAKAGE CURRENT; MOS TRANSISTORS; RADIATION DOSES; RADIATION EFFECTS; TEMPERATURE DEPENDENCE
Descriptors DEC
CURRENTS; ELECTRIC CURRENTS; ELECTRONIC CIRCUITS; SAFETY STANDARDS; SEMICONDUCTOR DEVICES; STANDARDS; TRANSISTORS