Published November 1981
| Version v1
Journal article
Tunneling in GaAs--V and GaAs--V3Si systems
Creators
- 1. A. A. Baikov Institute of Metallurgy, Academy of Sciences of the USSR, Moscow
Description
The energy gap is evaluated in superconducting V and V3Si by the method of tunneling through a Schottky barrier
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Dokl. (Engl. Transl.)
- Journal Volume
- 26
- Journal Issue
- 11
- Series
- Sov. Phys. - Dokl. (Engl. Transl.).
- Journal Page Range
- 1065
- ISSN
- 0038-5689
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14791690
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC CONTACTS; ENERGY GAP; GALLIUM ARSENIDES; MONOCRYSTALS; SCHOTTKY BARRIER DIODES; SUPERCONDUCTIVITY; SUPERCONDUCTORS; TUNNEL EFFECT; VANADIUM; VANADIUM SILICIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; VANADIUM COMPOUNDS