Published December 1997
| Version v1
Journal article
Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena
- 1. Thomson CSF Communications, Colombes (France)
- 2. CEA Centre d'Etudes, Bruyeres-le-Chatel (France)
- 3. INSA de Lyon, Villeurbanne (France)
Description
In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e., arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 44
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 2001-2006
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 34. IEEE nuclear and space radiation effects conference
- Dates
- 21-25 Jul 1997
- Place
- Snowmass, CO (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 29060972
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ELECTRIC POTENTIAL; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; TESTING; TRAPS
- Descriptors DEC
- HEAT TREATMENTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-970711--