Published December 1997 | Version v1
Journal article

Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena

  • 1. Thomson CSF Communications, Colombes (France)
  • 2. CEA Centre d'Etudes, Bruyeres-le-Chatel (France)
  • 3. INSA de Lyon, Villeurbanne (France)

Description

In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e., arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
44
Journal Issue
6Pt1
Journal Page Range
p. 2001-2006
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
34. IEEE nuclear and space radiation effects conference
Dates
21-25 Jul 1997
Place
Snowmass, CO (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
29060972
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; ELECTRIC POTENTIAL; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; TESTING; TRAPS
Descriptors DEC
HEAT TREATMENTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Secondary number(s)
CONF-970711--