Published February 2008 | Version v1
Journal article

Negative-ion source applications (invited)

Creators

  • 1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

Description

In this paper heavy negative-ion sources which we developed and their applications for materials science are reviewed. Heavy negative ions can be effectively produced by the ejection of a sputtered atom through the optimally cesiated surface of target with a low work function. Then, enough continuous negative-ion currents for materials-science applications can be obtained. We developed several kinds of sputter-type heavy negative-ion sources such as neutral- and ionized-alkaline metal bombardment-type heavy negative-ion source and rf-plasma sputter type. In the case where a negative ion is irradiated on a material surface, surface charging seldom takes place because incoming negative charge of the negative ion is well balanced with outgoing negative charge of the released secondary electron. In the negative-ion implantation into an insulator or insulated conductive material, high precision implantation processing with charge-up free properties can be achieved. Negative-ion implantation technique, therefore, can be applied to the following novel material processing systems: the surface modification of micrometer-sized powders, the nanoparticle formation in an insulator for the quantum devices, and the nerve cell growth manipulation by precise control of the biocompatibility of polymer surface. When a negative ion with low kinetic energy approaches the solid surface, the kinetic energy causes the interatomic bonding (kinetic bonding), and formation of a metastable material is promoted. Carbon films with high constituent of sp3 bonding, therefore, can be formed by carbon negative-ion beam deposition

Additional details

Identifiers

Publishing Information

Journal Title
Review of Scientific Instruments
Journal Volume
79
Journal Issue
2
Journal Page Range
p. 02C506-02C506.5
ISSN
0034-6748
CODEN
RSINAK

Conference

Title
12. international conference on ion sources
Acronym
ICIS 2007
Dates
26-31 Aug 2007
Place
Jeju (Korea, Republic of)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40006403
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANIONS; BONDING; CARBON; CARBON IONS; DEPOSITION; ELECTRON EMISSION; ELECTRONS; ION BEAMS; KINETIC ENERGY; NERVE CELLS; SPUTTERING; SURFACES; THIN FILMS; WORK FUNCTIONS
Descriptors DEC
ANIMAL CELLS; BEAMS; CHARGED PARTICLES; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY; FABRICATION; FERMIONS; FILMS; FUNCTIONS; IONS; JOINING; LEPTONS; NONMETALS; SOMATIC CELLS

Optional Information

Notes
(c) 2008 American Institute of Physics