Published January 7, 2009
| Version v1
Journal article
Characterization of microwave dielectric properties of ferroelectric parallel plate varactors
Creators
- 1. Centre for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 Singapore (Singapore)
Description
A procedure to accurately evaluate microwave dielectric properties of parallel plate varactors fabricated on a BST thin film deposited by pulsed laser deposition on a platinized silicon substrate is presented. The reliability of the high-frequency properties of dielectric thin films extracted from the measured reflection coefficient S11 is mainly limited by how accurately the parasitic effects are eliminated from the measured data. The parasitic effects were effectively removed on evaluating the thin-film dielectric properties based on the good agreement between the experimental results measured with the parasitic model and the computer simulation data.
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/42/1/015501Additional details
Identifiers
- DOI
- 10.1088/0022-3727/42/1/015501;
- PII
- S0022-3727(09)91249-9;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 42
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41053941
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DIELECTRIC PROPERTIES; ENERGY BEAM DEPOSITION; FERROELECTRIC MATERIALS; LASER RADIATION; MICROWAVE RADIATION; PLATES; PULSED IRRADIATION; REFLECTION; RELIABILITY; SILICON; SUBSTRATES; THIN FILMS; VARIABLE CAPACITANCE DIODES
- Descriptors DEC
- DEPOSITION; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; IRRADIATION; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SIMULATION; SURFACE COATING