High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x10³) during the test without any degradation, good retention ability (>10⁴ s) at a temperature of 120 °C with more than 10² on/off resistance ratio. (paper)