Published May 2008 | Version v1
Journal article Metadata-only

Detailed characteristics of expansion velocity of Si from laser ablated SiC

Creators

  • 1. Shandong Univ., Jinan (China). School of Physics
  • 2. Shandong Univ., Jinan (China). School of Information Science and Engineering
  • 3. Shandong Univ., Jinan (China). State Key Laboratory of Crystal Materials

Description

Optical emission of plasma is used to investigate the characteristics of dynamics distribution in the plume generated by ablation of a SiC sample using Nd:YAG laser. The plume expansion dynamics is characterized by time-of-flight measurement. We find that the profiles of Si(I) (390.55 nm) split into two components and the Si(II) (634.71 nm) spectra show two distinct expansion dynamics regions. The time-of-flight measurement of Si(II) (634.71 nm) under different laser irradiance conditions, from 0.236 GW/cm2 to 1.667 GW/cm2, are presented and discussed. (authors)

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
5
Journal Page Range
p. 1768-1771
ISSN
0256-307X

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
40104724
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
ABLATION; EMISSION; EXPANSION; LASER RADIATION; NEODYMIUM LASERS; PLASMA; PLUMES; RADIANT FLUX DENSITY; SILICON; SILICON CARBIDES; SPECTRA; TIME-OF-FLIGHT METHOD; VELOCITY
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELEMENTS; FLUX DENSITY; LASERS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SOLID STATE LASERS

Optional Information

Notes
4 figs., 22 refs.