Published October 21, 2005
| Version v1
Journal article
Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes
Creators
- 1. Department of Energetics, Via S. Marta 3, I-50139 Florence (Italy) and INFN of Florence, Via G. Sansone 1, I-50019 Sesto F. - Florence (Italy)
- 2. NIKHEF, Kruislaan 409, 1098 SJ Amsterdam (Netherlands)
- 3. INFN of Florence, Via G. Sansone 1, I-50019 Sesto F. - Florence (Italy)
- 4. Department of Energetics, Via S. Marta 3, I-50139 Florence (Italy)
- 5. INFN and Department of Physics, University of Modena and Reggio Emilia, I-41100 Modena (Italy)
- 6. Jozef Stefan Institute, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)
- 7. Alenia Marconi Systems, I-00131 Rome (Italy)
- 8. CERN, EP-TA1-SD CH 1211, Geneva 23 (Switzerland)
Description
In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky diodes. Even after an irradiation at a fluence of 1.4x1016p/cm2 and 7x1015n/cm2, we found the diodes still able to detect α and β particles with a charge collection efficiency (CCE) ranging from 25 to 30% after proton irradiation and about 18% after neutron irradiation, at the highest reverse bias applied. This corresponds to a charge collection distance (CCD) of 7μm after the proton irradiation and 5μm after the neutron irradiation. As the irradiation level approaches the range ∼1015/cm2, the material behaves as intrinsic due to a very high compensation effect
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2005.06.017;
- PII
- S0168-9002(05)01189-7;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 552
- Journal Issue
- 1-2
- Journal Page Range
- p. 138-145
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 5. international conference on radiation effects on semiconductor materials, detectors and devices
- Dates
- 10-13 Oct 2004
- Place
- Florence (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37045019
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; CHARGE-COUPLED DEVICES; EPITAXY; HYDROGEN 4; IRRADIATION; NEUTRONS; PROTONS; SCHOTTKY BARRIER DIODES
- Descriptors DEC
- BARYONS; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; FERMIONS; HADRONS; HYDROGEN ISOTOPES; ISOTOPES; LIGHT NUCLEI; NUCLEI; NUCLEONS; ODD-ODD NUCLEI; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.