Published December 1, 2009 | Version v1
Journal article

Self-consistent potentials and linear regime conductance of cylindrical nanowire transistors in the R-matrix formalism

  • 1. Faculty of Physics, 'Materials and Devices for Electronics and Optoelectronics' Research Center, University of Bucharest, P.O. Box MG-11, 077125 Magurele-Ilfov (Romania)

Description

One of the major difficulties in solving the coupled Schroedinger-Poisson equations for open quantum systems is providing the wave functions for a large energy set. In this context, the R-matrix formalism provides an alternative method to obtain efficiently the wave functions. In a first step, which is energy independent, the eigenvalue problem associated with the quantum system is solved only once using fixed boundary conditions. Then, in a second step, the wave functions and transmission coefficients are obtained with a much lower computational effort for each energy. As an application, self-consistent potential and charge distribution, as well as the ballistic source-drain conductance, are calculated for a cylindrical nanowire transistor. The numerical accuracy with respect to basis cardinality is also discussed.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
106
Journal Issue
11
Journal Page Range
p. 113714-113714.7
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41094545
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
BOUNDARY CONDITIONS; CHARGE DISTRIBUTION; EIGENFUNCTIONS; EIGENVALUES; POISSON EQUATION; QUANTUM WIRES; R MATRIX; SCHROEDINGER EQUATION; WAVE FUNCTIONS
Descriptors DEC
DIFFERENTIAL EQUATIONS; EQUATIONS; FUNCTIONS; MATRICES; NANOSTRUCTURES; PARTIAL DIFFERENTIAL EQUATIONS; WAVE EQUATIONS

Optional Information

Notes
(c) 2009 American Institute of Physics