Influence of substrate orientation on silicon capture in A- and B-sublattice of gallium arsenide at molecular beam epitaxy

Studies of surface growth orientation effects near singular borders (100) and (111) Angstrom on the silicon capture in A- and B-sublattice of gallium arsenide under molecular beam epitaxy (MBE) are carried out. Existence of orientation dependence of impurity defects in the MBE layers of GaAs is evidence of its formation is non-equilibrium process and the process takes place the crystallization stage. Obtained results are analyzing from the view of differences in GaAs surfaces of different orientation