Published October 1974 | Version v1
Book Metadata-only

Implanted GaAs characterization using Raman spectroscopy. Application to electroluminescent diodes

Creators

  • 1. Paris-6 Univ., 75 (France). Lab. de Physique des Solides
  • 2. Lignes Telegraphiques et Telephoniques (LTT), 78 - Conflans-Sainte-Honorine (France)

Description

The profile of Zn implanted AsGa was investigated by Raman spectroscopy using lasers of various wavelength. The crystalline-amorphous structure transformation that destroys the lattice periodicity entails a jump of the phonic dispersion curves into the central Brillouin zone. The importance of the crystalline structure left in the implanted region is measured by the ratio of the intensities of a normal mode to that of the amorphous region. The recrystallization process was studied at ennealing temperatures of 850 deg C for 1 hour and 6 hours annealing duration. A long time duration of annealing (845 deg C, 6 hours) allowed an electroluminescent diode to be obtained, the characteristics of which were related to the results obtained from Raman spectroscopy

Abstract (French)

On a etudie le profil de l'AsGa implante au Zn par spectrometrie Raman en utilisant des lasers de longueur d'onde differentes. La transformation structure cristalline-structure amorphe detruisant la periodicite du reseau a pour effet de projeter au centre de la zone de Brillouin les courbes de dispersion phonique. Le rapport des intensites d'un mode normal a celle de la partie amorphe mesure le taux de structure cristalline restante dans la partie implantee. Le processus de recristallisation a ete etudie pour des temperatures de recuit de 850 deg C et des durees de 1 heure et 6 heures. Un recuit de longue duree (845 deg C, 6 heures) a permis d'obtenir une diode electroluminescente dont les caracteristiques ont ete reliees aux resultats obtenus par spectroscopie Raman

Additional details

Additional titles

Original title (French)
Caracterisation de l'AsGa implante par spectroscopie Raman. Application aux diodes electroluminescentes

Publishing Information

Publisher
Societe Francaise du Vide.
Imprint Place
Paris, France
Imprint Title
Electron and ion beam processes applications. 4. International congress AVISEM 74. Toulouse, October 8-11, 1974
Imprint Pagination
p. 119-125.

Conference

Title
4. International congress AVISEM 74. Application of electronic and ionic processes.
Dates
08 Oct 1974.
Place
Toulouse, France.

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
7242778
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; ANNEALING; CRYSTAL STRUCTURE; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; ION IMPLANTATION; LIGHT EMITTING DIODES; RAMAN EFFECT; SEMICONDUCTOR DIODES; SPECTRA; ZINC IONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; LUMINESCENCE; SEMICONDUCTOR DEVICES

Optional Information

Notes
Imprint:Supplement to the journal Le Vide les Couches Minces no.171.;Application des processus electroniques et ioniques. 4. Congres international AVISEM 74. Toulouse, 8-11 octobre 1974.