Published November 2005
| Version v1
Journal article
Calculating of neutron transmutation doping for silicon in SPRR-300
Creators
- 1. China Academy of Engineering Physics, Mianyang (China). Inst. of Nuclear Physics and Chemistry
Description
The principle of flux calculation for Neutron Transmutation Doping (NTD) silicon is showed. The class structure of the program and functions of several foundational classes are given. The features of the program in flux calculating, detailed lists treating, and original data editing, are described. Those interfaces are indicated by pictures. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 25
- Journal Issue
- 6
- Journal Page Range
- p. 712-714, 723
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 37113400
- Subject category
- S36: MATERIALS SCIENCE; S21: SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS;
- Descriptors DEI
- CHINA; COMPUTER CALCULATIONS; CRYSTAL DOPING; MONOCRYSTALS; NEUTRONS; POOL TYPE REACTORS; PROGRAMMING; RADIANT FLUX DENSITY; RESEARCH REACTORS; SILICON; TRANSMUTATION
- Descriptors DEC
- ASIA; BARYONS; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FLUX DENSITY; HADRONS; NUCLEONS; REACTORS; RESEARCH AND TEST REACTORS; SEMIMETALS; WATER COOLED REACTORS; WATER MODERATED REACTORS
Optional Information
- Notes
- 4 figs., 2 refs.