Nanostructured Zn(O,S) thin films by SILAR Technique for solar photovoltaic cells

In the present paper, we report the synthesis of Zn(O,S) thin films via successive ionic layer adsorption and reaction (SILAR) technique. The Zn(O,S) thin films were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscope (SEM) and UV-VIS spectrophotometer for their structural, Raman, surface morphological and optical properties respectively. The obtained Zn(O,S) thin films were polycrystalline with presence of hexagonal ZnO and cubic ZnS phase. The Raman peaks observed at 578 and 1095 cm^-1 can be attributed to A1 (LO) and E1 (LO) of ZnO, while peaks at 811 and 1095 cm^-1 can be assigned as 2LO and 3LO of ZnS. The SEM image shows uniform, crack free and homogeneous surface of the Zn(O,S) thin films. The EDAX analysis gives the quality proportion of elements as 51.67:26.33:22, which is in good stoichiometric of Zn(O,S). The transmission spectra of Zn(O,S) films indicates a good transmission characteristics and showed direct optical transition with band gap energies in between 3.65 - 3.53 eV. This Zn(O,S) material has potential application in photovoltaic cell as a buller layer. (author)