Published July 1990 | Version v1
Journal article Metadata-only

Structural transition in InSe films

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Problem Materialovedeniya

Description

The influence of indium selenide film obtaining conditions on their structure and properties is studies. It is stated that indium selenide films, deposited on various substrates and annealed at the temperatures below 650 K, are in amorphous state. Structure of InSe films, annealed in the 650-670 K temperature range, is close to stable phase structure. Results of optical and X-ray studies testify to realization of crystal-phase transformation from amorphous to polycrystalline state at film annealing temperature of 650-670 K

Additional details

Additional titles

Original title (Russian)
Структурный переход в пленках InSe

Publishing Information

Journal Title
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
Journal Volume
26
Journal Issue
7
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
1553-1555
ISSN
0002-337X
CODEN
IVNMA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
23016423
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABSORPTION SPECTRA; AMORPHOUS STATE; ANNEALING; CRYSTAL-PHASE TRANSFORMATIONS; FILMS; INDIUM SELENIDES; MONOCRYSTALS; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
CHALCOGENIDES; CRYSTALS; HEAT TREATMENTS; INDIUM COMPOUNDS; PHASE TRANSFORMATIONS; SELENIDES; SELENIUM COMPOUNDS; SPECTRA; TEMPERATURE RANGE