Published April 1, 2011 | Version v1
Journal article

Nanocomposite oxide thin films grown by pulsed energy beam deposition

  • 1. National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36, 77125 Bucharest-Magurele (Romania)
  • 2. INSP, Universite Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris (France)
  • 3. LIM, ENSAM, 151 boulevard de l'Hopital, 75013 Paris (France)

Description

Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2010.11.139

Additional details

Identifiers

DOI
10.1016/j.apsusc.2010.11.139;
PII
S0169-4332(10)01662-4;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
257
Journal Issue
12
Journal Page Range
p. 5337-5340
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
Symposium R - Laser processing and diagnostics for micro and nano applications
Acronym
E-MRS 2010 spring meeting
Dates
7-11 Jun 2010
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.