Published December 3, 1974
| Version v1
Patent
Open
Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors
Creators
Description
no abstract available
Files
6178611.pdf
Files
(331.6 kB)
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Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- IPC:
- Int. Cl.H01j37/00.
- IPC
- Int. Cl.H01j37/00.
- Patent number
- US patent document 3,852,612
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6178611
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRICAL PROPERTIES; ELECTRONS; FABRICATION; IRRADIATION; JUNCTION TRANSISTORS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; THYRISTORS
- Descriptors DEC
- ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; LEPTONS; MEV RANGE; PHYSICAL PROPERTIES; RADIATION EFFECTS; TRANSISTORS