Published March 1988
| Version v1
Journal article
Energy spectrum of carriers in a narrow quantum well in a gapless semiconductor
Description
Energy spectrum of carriers for a gapless semiconductor of HgTe type in the presence of very narrow one-dimensional quantum well was calculated
Additional details
Additional titles
- Original title (Russian)
- Энергетический спектр носителей в узкой квантовой яме в бесщелевом полупроводнике
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 22
- Journal Issue
- 3
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 519-521
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 19102137
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BOUND STATE; CHARGE CARRIERS; EFFECTIVE MASS; ENERGY LEVELS; HAMILTONIANS; MERCURY TELLURIDES; MONOCRYSTALS; NUMERICAL SOLUTION; SCHROEDINGER EQUATION; SQUARE-WELL POTENTIAL
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; DIFFERENTIAL EQUATIONS; EQUATIONS; MASS; MATHEMATICAL OPERATORS; MERCURY COMPOUNDS; NUCLEAR POTENTIAL; PARTIAL DIFFERENTIAL EQUATIONS; POTENTIALS; QUANTUM OPERATORS; TELLURIDES; TELLURIUM COMPOUNDS; WAVE EQUATIONS