Published January 1986
| Version v1
Journal article
Investigation of radiation-induced defect formation and annealing in unalloyed GaSb
- 1. Gruzinskij Politekhnicheskij Inst., Tbilisi (USSR)
Description
Radiation-induced defect formation and annealing in unalloyed GaSb during fast reactor neutron irradiation at 300 K is investigated. During unalloyed GaSb irradiation with fast neutrons point radiation-induced defects (RD) of Frenkel defect type, interacting with impurity atoms or intrinsic GaSb defects, forming isolated RD stable at 300 K, are formed. Similar defects are annealed at the first annealing stage (90-200 deg C). At the second and third stages (260-400 deg C and 450-630 deg C) cluster type RD are annealed. A conclusion is drawn that RD clusters are the main radiation defects introduced during GaSb irradiation by fast neutrons
Additional details
Additional titles
- Original title (Russian)
- Исследование образования и отжига радиационных дефектов в нелегированном GaSb
Publishing Information
- Journal Title
- Byull. Akad. Nauk Gruz. SSR
- Journal Volume
- 121
- Journal Issue
- 1
- Series
- Byull. Akad. Nauk Gruz. SSR.
- Journal Page Range
- 65-68
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 18006878
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANTIMONIDES; ELECTRIC CONDUCTIVITY; FAST NEUTRONS; FRENKEL DEFECTS; GALLIUM COMPOUNDS; HALL EFFECT; HIGH TEMPERATURE; MEDIUM TEMPERATURE; NEUTRON FLUENCE; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SOLID CLUSTERS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ANTIMONY COMPOUNDS; BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; HEAT TREATMENTS; MATERIALS; NEUTRONS; NUCLEONS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; VACANCIES